mobility enhancement meaning in Chinese

迁移率增加

Replication mobility enhancements
>复制移动性增强功能
Due to the change in lattice constant and the distortion of energy band , strained si exhibits great mobility enhancement compared with the conventional si material , and it is the critical reason for the wide application of strained si mosfets
由于晶格常数的改变,应变硅中载流子的迁移率高于普通硅材料,这是应变硅mosfet性能提高的根本原因。
In strained - si pmosfet with si0 . 76ge0 . 24 substrate , the mobility enhancement factor is 1 . 25 . however , as the ge content in sige substrate surpasses 40 % , the mobility enhancement in strained si pmosfet becomes saturated
对于衬底中ge含量为24 %的应变硅pmosfet ,空穴迁移率是相同尺寸硅pmosfet的1 . 25倍,当ge含量超过40 %时,空穴迁移率达到饱和。
In order to design strained - si mosfets more efficiently , it is necessary to thoroughly analysis the mechanism behind mobility enhancement and thus establish related model to clarify the relationship between mobility and strain
为了更有效的设计、应用应变硅mosfet ,必须深入研究应变硅中载流子的迁移率增强机理,并在此基础上建立相应的物理模型,导出应力强度与迁移率的定量关系。